ION BEAM THINNING - Most often cited:

L. Hultman, H. Ljungcrantz, C. Hallin, E. Janzen, J-E. Sundgren, B. Pécz, L.R. Wallenberg:
Growth and electronic properties of epitaxial TiN thin films on 3C – SiC (001) and 6H – SiC (0001) substrates by reactive magnetron sputtering.

» Journal of Materials Research Vol. 11 No 10, October 1996

A. Barna, Gy. Radnóczi, B. Pécz:
Preparation technics for TEM.

» Handbook of Microscopy Vol 3. II. Special Topics 3. (1997) Ed. byS. Amelinckx, D.van Dyck, J. Van Landuyt, G. Van Tendeloo.

A. Barna, B. Pécz, M. Menyhárd:
Amorphization and surface morfology development at low energy ion milling.

» Ultramicroscopy 70 (1998) 161-171

A. Barna, B. Pécz, M. Menyhard:
TEM sample preparation by ion milling/amorphization.

» Micron 30 (1999) 267 – 276

V. Heera, F. Fountaine, W. Skorupa, B. Pécz, Á. Barna:
Ion beam synthesis of epitaxial silicon carbide in nitrogen-implemented diamond.

» Applied Physics Letters Vol 77, No 2, 10 July 2000

V. Heera, W. Skorupa, B. Pécz, L. Dobos:
Ion-beam synthesis of graphite and diamond in silicon carbide.

» Applied Physics Letters Vol 76, No 20, 15 May 2000

B. Pécz, H. Weishart, V. Heera, L. Tóth:
Diamond formation in cubic silicon carbide.

» Applied Physics Letters Vol 82, No 1, 6 Jan 2003