Further papers and presentations on ion beam thinning:

A. Barna, M. Menyhard, L. Kotis, Gy. J. Kovacs, G. Radnoczi, A. Zalar and P. Panjan:
Unexpectedly high sputtering yield of carbon at grazing angle of incidence ion bombardment.

» J. Appl. Phys. 98 24901 (2005)

L.Kotis, A. Sulyok, M. Menyhard, J.B. Malherbe and R.Q. Odendaal:
Determination of the thickness and density of the ion bombardment induced altered layer in SiC by means of reflection electron energy loss study.

» Appl. Sur. Sci 252/5 1785-1792 (2005)

Weishart, V. Heera, F. Eichhorn, B. Pécz, L. Tóth, W. Skorupa:
Diamond formation by carbon implantation into cubic silicon carbide

» Diamond and Related Materials 13, 627-632 (2004)

R. Koshiba, G. Ecke, O Ambacher, M. Menyhard:
Sputtering of SiC with low energy He and Ar Ions Under Grazing Incidence

» Radiaton Effects and Defects in Solids, 158 (2003) 721-730

A. Barna, M. Menyhard, G. Zsolt, A. Koos, A. Zalar and P. Panjan:
Interface broadening due to Ar+ ion bombardment measured on Co/Cu multilayer at grazing angle of incidence.

» J. Vac.Sci. Tech. A 21 (2003) 553-557

A. Barna, M. Menyhard, G. Zsolt, N.Q. Khanh, A. Zalar and P. Panjan:
Relative sputter rate measured in Cu/Co multilayer using Ar+ ion bombardment at grazing angle of incidence.

» J. Vac.Sci. Techol. A 21 (2003) 196-200.

G. Battistig, J.L. Lábár, S. Gurbán, A. Sulyok, M. Menyhard, I. C. Vickridge , E. Szilagyi, J. Malherbe and Q. Odendaal:
Polarity dependent carbon enrichment on 6H-SiC{0001} due to low energy ion bombardment.

» Surf. Sci Lett 526 (2003) L133-L136

B. Pécz, L. Tóth, L. Dobos, T. Szuts, V. Heera and W. Skorupa T. Dekorsky:
TEM study of GaAs implanted by high dose nitrogen ions

» pp. 441-444 in Microscopy of Semicond. Materials, IOP Conf. Ser. No. 180 (2003)

Pécz, H. Weishart, V. Heera and L. Tóth:
Diamond formation in cubic silicon carbide

» Appl. Phys. Letters 82, 46-48 (2003)

B. Pécz, L. Tóth, M.A. di Forte-Poisson and J. Vacas:
Ti3SiC2 formed in annealed Al/Ti contacts to p-type SiC

» Appl. Surf. Sci. 206, 8-11 (2003)

G. Szenes, Zs. Horváth, B. Pécz, F. Pászti, L. Tóth:
Tracks induced by swift heavy ions in semiconductors.

» Phys. Rev. B 65, 045206 (2002)

O.H. Krafcsik, K.V. Josepovits, P. Deák, L. Tóth and B. Pécz:
Growth of epitaxial b-SiC at the SiO2/Si interface as a result of annealing in CO

» J. Elchem. Soc. 149, G297-G299 (2002)

L. Tóth, B. Pécz, Zs. Czigány, K. Amimer and A. Georgakilas:
Microstructure of GaN layers grown onto (001) and (111) GaAs substrates by molecular beam epitaxy

» Materials Science Forum 433-434, 999-1002 (2002)

G. Sáfrán, J. Ariake, N. Honda, K. Ouchi, P. B. Barna, M. Menyhard, G. Radnóczi
XTEM and AES study of the microstructure of high density thin film perpendicular magnetic recording media: the effects of a Ti interlayer

» . of Magnetism and Magnetic Material (JMMM) 235/1-3, (2001) 115-119

A. Csik, G.A. Langer, D.L. Beke, Z. Erdelyi, M. Menyhard, A. Sulyok
Interdiffusion in amorphous Si/Ge multilayers by Auger depth profiling technique

» J. Appl. Phys. 89 804-806 (2001)

B. Pécz, L. Tóth, V. Heera and W. Skorupa:
Synthesis of epitaxial diamond grains in cubic SiC by high temperature carbon implantation pp. 367-370

» Microscopy of Semicond. Materials, IOP Conf. Ser. No. 169 (2001)

B. Pécz, L. Tóth and Zs. Czigány, K. Amimer and A. Georgakilas:
GaN layers grown directly onto GaAs by molecular-beam epitaxy

» pp. 293-296 in Microscopy of Semicond. Materials, IOP Conf. Ser. No. 169 (2001)

O.H. Krafcsik, G.Z. Radnóczi, L. Tóth, B. Pécz and P. Deák:
Characterization of 3C-SiC crystallites grown on Si(100)by CO annealing

» pp. 189-192 in Microscopy of Semicond. Materials, IOP Conf. Ser. No. 169 (2001)

A. Georgakilas, K. Amimer, P. Tzanetakis, Z. Hatzopoulos, M. Cengher, B. Pecz, Zs. Czigany, L. Tóth M.V. Baidakova, A.V. Sakharov and V.Yu. Davydov:
Correlation of the structural and optical properties of GaN grown on vicinal (100) GaAs substrates with the plasma-assisted MBE growth conditions

» J. Crystal Growth, 227-228, 410-414 (2001)

A. Georgakilas, Zs. Czigany, K. Amimer, V.Yu. Davydov, L. Toth, B. Pecz:
MBE growth of different hexagonal GaN crystal structures on vicinal (100) GaAs substrates

» Mat. Sci. Eng. B 82, 16-18 (2001) (Proc. EMRS, Strasbourg, 2000)

M. Menyhard, A. Sulyok, K. Pentek and A.M. Zeltser
Demixing in spin valve structures; an Auger depth profiling study.

» Thin Solid Films 366 (2000) 129-134

K. Amimer, A. Georgakilas, K. Tsagaraki, M. Androulidaki, D. Cengher, L. Tóth, B. Pécz and M. Calamiotou:
Single-crystal hexagonal and cubic GaN growth directly on vicinal (001) GaAs substrates by moleícular-beam epitaxy

» Appl. Phys. Lett. 76, 2580-2582 (2000)

W. Heiss, G. Prechtl, D. Stifter, H. Sitter, G. Springholz, T. Riemann, F. Bertram, D. Rudloff, J. Christen, G. Bley, U. Neukirch, J. Gutowski and L. Tóth:
Exciton dynamics in ZnCdSe/ZnSe ridge quantum wires

» Physica E 7, 526-530 (2000)

M. Menyhard
High Depth-Resolution Auger Depth Profiling / Ion Mixing

» Micron 30 (1999) 255-265

B. Pécz, M.A. di Forte-Poisson, F. Huet, G. Radnóczi. L. Tóth, V. Papaioannou, J. Stoemenos:
Growth of GaN layers onto misoriented (0001) sapphire by metalorganic chemical vapour deposition

» J. Appl. Phys. 86, 6059-6067 (1999)

B. Pécz, M.A. di Forte Poisson, G. Radnóczi. L. Tóth:
Growth of GaN layers onto misoriented (0001) sapphire by MOCVD

» pp. 389-392 in Microscopy of Semicond. Materials, 1999 (IOP Conf. Ser. No. 164

A.M. Zeltser, K. Pentek, M. Menyhard and A. Sulyok:
Thermal stability of CoFe, Co and NiFe/Co spin valves

» IEEE Transactions on Magnetics, 34 (1998)1417-19

M. Menyhard
On the performance of the TRIM simulation for the evaluation of Auger depth profiles.

» Surf. Interface Anal.26 1001-1007 (1998)

E. Harry, Y. Pauleau, M. Adamik, P.B. Barna, A. Sulyok and M. Menyhard
Growth characteristics of tungsten--carbon films deposited by magnetron sputtering

» Surface and Coatings Technology 100-101 (1998) 286

M. Menyhard and A. Sulyok
AES depth profiling of Ge/Si multilayers using He+ And Ar+ Ions

» J. Vac. Sci.Tech A16 1091-95 (1998)

I. Bertoti, A Toth and M. Menyhard
Ion beam effects in Thin Surface Films and Interfaces in Handbook of Surface and Interface Analysis: Methods for Problem-Solving

» (Ed. J.C. Riviere and S. Myhra) Marcel Dekker Inc. 1998 p. 297-346

I. Kovács, A. Sulyok, M. Menyhárd, G. Radnóczi
Investigation of aluminium induced crystallisation of amorphous germanium thin films by auger depth profiling.

» Solid State Phenomena 56 (1997) 227-232.

A. Sulyok and M. Menyhard
Detection of deeply buried thin oxide layer by means of Auger depth profiling.

» Rev. Sci. Inst. 68 (1997) 2847

A. Konkol and M. Menyhard
Determination of the ion sputtering induced in-depth distribution by means of elastic peak electron spectroscopy.

» Surf. Interface Anal. 25 699 (1997)

A. Sulyok, A. Galisova and M. Menyhard
Auger depth profiling with good depth resolution of low energy implantation induced ion mixing.

» Mat. Sci. Forum 248-249 (1997) 245-248

B. Pécz, M.A. di Forte-Poisson, L. Tóth, G. Radnóczi:
TEM characterization of GaN grown on sapphire

» pp. 227-230 in Microscopy of Semicond. Materials, 1997 (IOP Conf. Ser. No. 157)

B. Pécz, L. Tóth, G. Radnóczi, C. Hallin, E. Janzén:
Growth of SiC layers on off axis 4H-SiC substrates

» pp. 319-322 in Microscopy of Semicond. Materials, 1997 (IOP Conf. Ser. No. 157)

B. Pécz, L. Tóth, G. Radnóczi, G. Huhn, M.A. di Forte-Poisson, V. Papaioannou, J. Stoemenos:
Transmission electron microscopy characterization of metalorganic chemical vapor deposition grown GaN layers

» Mat. Sci. Eng. B 50, 93-96 (1997)

Z. Csahok, Z. Farkas, M. Menyhard, G. Gergely and Cs. S. Daroczi:
Surface morphology development during ion sputtering: roughening or smoothing?

» Surf. Sci. Lett. 364 (1996 ) L600-L604

A. Barna and M. Menyhard:
Study of low energy atomic mixing by means of Auger depth profiling, XTEM and TRIM simulation on Ge/Si multilayer system.

» Surf. Interface Anal. 24 (1996) 476-480

M. Menyhard, A Konkol, G. Gergely A. Barna:
The use of elastic peak spectroscopy in depth profiling.

» Vacuum 46 1171 (1995)

M. Menyhard, A. Barna, J.P. Biersack, K. Järrendahl, and J-E Sundgren:
Study of ion mixing during Auger depth profiling of Ge-Si multilayer system II; low ion energy (0.2-2 keV ) range.

» J. Vac. Sci.Techol. A13 (1995) 1999

A. Barna and M. Menyhard:
Auger depth profile analysis of deeply buried interfaces

» phys.stat sol. (a) 145, 263 (1994)

A. Barna and M. Menyhard:
High resolution Auger depth profile analysis of deeply buried interfaces

» Thin Films, Proc.of TAFT/HVITF 94 (eds. G Hecht, F Richter, J Hahn) DGM Informationsgesellschaft Verlag, p. 285

M. Menyhard, A. Barna, and H.J. Biersack:
Study of ion mixing during AES depth profiling of Ge-Si multilayer system.

» J. Vac. Sci.Tech A 12 2368 (1994)

M. Menyhard, A. Barna, A Sulyok, K. Jarrendahl, J-E Sundgren and H.J. Biersack:
Low energy ion mixing in Ge-Si Multilayer system

» Nuc. Inst. Method B 85 (1994) 383

M. Menyhard, A Konkol, G.Gergely and A Barna:
Development in Auger depth profiling technique

» J. Elec. Spec. Rel. Phen. 68 (1994) 653

A. Konkol, A. Sulyok, M. Menyhard, A. Barna:
Auger in-depth profiling of Mo-Si multilayers

» J. Vac. Sci. Tech. A12 436 (1994)

A. Barna, A. Konkol A. Sulyok and M. Menyhard:
Experimental study of low energy ion mixing.

» Vacuum 45 333(1994)

A. Barna, A Sulyok and M. Menyhard:
Improved depth resolution of AES in-depth profiling

» Surface Interface Anal. 19 77 (1992)